SK hynix will apply hybrid bonding technology starting with its next-generation high bandwidth memory (HBM), which will be stacked at 20 layers. Hybrid bonding is a technology that directly connects semiconductors with copper without the need for micro bumps, indicating a significant expected change in processes going forward.
On April 17, Lee Kang-wook, Vice President of SK hynix, made this announcement during a workshop on "Semiconductor Technologies Enabling Artificial Intelligence (AI)" organized by the Institute of Electrical and Electronics Engineers (IEEE) at the Korea Science and Technology Center in Gangnam, Seoul. Lee leads the development of HBM packaging technology at SK hynix.
“We believe that it is possible to stack HBM4 up to 16 layers using existing technology," he said. "We plan to extend the mass reflow-molded underfill (MR-MUF) technology."
"However, starting from 20 layers, we are preparing to make hybrid bonding the base technology,” he added.
For the sixth-generation HBM 'HBM4', which will begin mass production in the second half of the year, the D-RAM will be connected with micro bumps, and the gaps will be filled with liquid material using MR-MUF technology. However, starting with the 20-layer version, the adoption of hybrid bonding will be necessary.
To increase HBM capacity and improve data processing speeds, it is essential to stack more D-RAM. This results in greater thickness, making it difficult to use traditional packaging methods. Therefore, SK hynix is pursuing the application of hybrid bonding, which eliminates bumps, reduces thickness, and lowers power consumption.
The company plans to partially incorporate hybrid bonding into the seventh-generation HBM 'HBM4E', slated for mass production next year, and to fully transition processes beginning with the eighth generation, 'HBM5', which is expected to be stacked at 20 layers.
